bys12-90 and BYS12-100 vishay semiconductors 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) max. 0.194 (4.93) 0.208 (5.28) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band dimensions in inches and (millimeters) maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol bys12-90 BYS12-100 unit device marking code bys bys 209 210 maximum repetitive peak reverse voltage v rrm 90 100 v maximum average forward rectified current i f(av) 1.5 a peak forward surge current single half at 8.3ms i fsm 40 a sine-wave superimposed on rated load at 10ms 30 150 (1) maximum thermal resistance ?junction ambient r ja 125 (2) ?/w 100 (3) voltage rate of change (v r ) dv/dt 10,000 v/ s junction and storage temperature range t j , t stg 55 to +150 ? electrical characteristics (t a = 25? unless otherwise noted) maximum instantaneous i f = 1a v f 750 mv forward voltage at: (4) i f = 15ma 360 maximum dc reverse current t j = 25? 100 a at v rrm (4) t j = 100? i r 1ma notes: (1) mounted on epoxy-glass hard tissue (2) mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu (3) mounted on al-oxide-ceramic (al 2 o 3 ), 50 mm 2 35 m cu (4) pulse test: 300 s pulse width, 1% duty cycle features ?low power loss, high efficiency ?low profile surface mount package ?built-in strain relief ?very low switching losses ?low reverse current ?high surge capability ?guardring for overvoltage protection ?plastic package has underwriters laboratory flammability classification 94v-0 0.094 max. (2.38 max.) 0.220 (5.58) ref 0.066 min. (1.68 min.) 0.052 min. (1.32 min.) mounting pad layout do-214ac (sma) mechanical data case: jedec do-214ac molded plastic body terminals: solder plated, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250?/10 seconds at terminals polarity: color band denotes cathode end weight: 0.002oz., 0.064g reverse voltage 90 to 100v forward current 1.0a extended voltage range schottky barrier rectifiers document number 86015 www.vishay.com 15-jan-04 1
fig. 4 ?reverse current vs. junction temperature i r -- reverse current ( a) t j -- junctiontemperature ( c) p r -- max. reverse power dissipation (mw) t j -- junctiontemperature ( c) t amb -- ambient temperature ( c) fig. 5 ?max. reverse power dissipation vs. junction temperature fig. 1 ?forward current vs. forward voltage fig. 3 ?max. average forward current vs. ambient temperature i f -- forward current (a) v f -- forward voltage (v) t amb -- ambient temperature ( c) i fav -- average forward current (a) v r -- reverse voltage (v) c d -- diode capacitance (pf) fig. 6 ?diode capacitance vs. reverse voltage i fav -- average forward current (a) fig. 2 ?max. average forward current vs. ambient temperature 0.001 0.010 0.100 1.000 10.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 t j =25 c t j =150 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 v r =v rrm half sinewave 0 0 0.4 0.8 1.2 1.6 2.0 40 80 120 160 200 v r =0v, half sinewave 100k/w 125k/w 150k/w r thja =25k/w 100 1000 10000 100000 25 50 75 100 125 150 v r = v rrm 0 500 1000 1500 2000 2500 25 50 75 100 125 150 v r = v rrm p r ?imit @100%v r 0 20 40 60 80 100 120 140 160 180 0.1 1.0 10.0 100.0 f=1mhz r thja 25k/w ratings and characteristic curves (t a = 25? unless otherwise noted) bys12-90 and BYS12-100 vishay semiconductors www.vishay.com document number 86015 2 15-jan-04
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